GTO緩沖吸收電容器
型號(hào) | 規(guī)格 | 價(jià)格(元) | 尺寸(mm) | 引出 |
C35 | 0.47vF/5000V | 50 | Φ53*L50 | M6 |
價(jià)格僅供參考,以報(bào)價(jià)單為準(zhǔn)。
主要應(yīng)用/Application
廣泛應(yīng)用于GTO緩沖吸收以及大電流,高壓場(chǎng)合。
Widely used in GTO snubber,high current and high voltage application.
產(chǎn)品特點(diǎn)/Characteristics
電介質(zhì):聚丙烯薄膜
結(jié)構(gòu):金屬化膜內(nèi)串結(jié)構(gòu)
封裝:外包阻燃邁拉膠帶,阻燃(94V-0級(jí))環(huán)氧封裝
引出: M6或M8銅螺母引出
能承受大電流,高電壓
低損耗、高穩(wěn)定
具有自愈性
Dielectric:Polypropylene film
Construction:Metalized film internal series connection
Coating:Polyester tape wrapping with resin sealing.
Flame retardant execution(UL94V-0)
Terminals:Copper nut leads,threaded insert M5,M6 or M8
High current,high voltage
Low losses,high stability
Self healing
技術(shù)性能/Specifications
引用標(biāo)準(zhǔn)/Reference standards | GB/T 17702 IEC 61071 |
工作溫度范圍/Operating temperature range | -40℃~85℃ |
容量范圍/Capacitance | 0.33μF~3.0μF |
額定電壓/Rated Voltage | 4000Vdc~10 000Vdc |
容量偏差/Tolerance | ±5% ±10% |
極間耐電壓/Test voltage between terminals | 1.5Ur(Vdc)10s 25℃±5℃ |
極殼耐電壓/Test voltage between terminals and case | 3000V 50Hz 60s,25℃±5℃ |
損耗角正切/Dissipation factor | tgδ≤8×10-4 at 25℃±5℃,1kHz |
絕緣電阻/Insulation resistance | C×R≥30000s,at 100Vdc,25℃±5℃,60s |
預(yù)期壽命/Life expectancy | 200000h at Ur and 70℃ |
此產(chǎn)品關(guān)鍵字:
IGBT吸收電容、IGBTSNUBBER、IGBT吸收電容廠家、IGBT吸收電容價(jià)格
華裕電容-高品質(zhì)金屬化薄膜電容專業(yè)制造商


















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